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? semiconductor MSM63188A 1/32 general description the MSM63188A is an enhanced version of the msm63188 in which supply currents have been improved. the MSM63188A is a cmos 4-bit microcontroller with built-in 1024-dot matrix lcd drivers and operates at 0.9 v (min.). the MSM63188A is suitable for applications such as games, toys, watches, etc. which are provided with an lcd display. the MSM63188A is an m6318x series mask rom-version product of olms-63k family, which employs oki's original cpu core nx-4/250. the msm63p180 is the one-time-programmable rom version of msm63188/a, having one- time prom (otp) as internal program memory. the msm63p180 is used to evaluate the software development. features ? rich instruction set 439 instructions transfer, rotate, increment/decrement, arithmetic operations, comparison, logic operations, mask operations, bit operations, rom table reference, external memory transfer, stack operations, flag operations, branch, conditional branch, call/return, control. ? rich selection of addressing modes indirect addressing of four data memory types, with current bank register, extra bank register, hl register and xy register. data memory bank internal direct addressing mode. ? processing speed two clocks per machine cycle, with most instructions executed in one machine cycle. minimum instruction execution time : 61 m s (@ 32.768 khz system clock) 1 m s (@ 2 mhz system clock) ? clock generation circuit low-speed clock : 32.768 khz crystal oscillator high-speed clock : 2 mhz (max.) rc or ceramic oscillator select ? program memory space 16k words basic instruction length is 16 bits/1 word ? data memory space 3584 nibbles ? external data memory space 64 kbytes (expandable by using an i/o port) ? semiconductor MSM63188A 4-bit microcontroller with built-in 1024-dot matrix lcd drivers and melody circuit, operating at 0.9 v (min.) e2e0056-19-62 this version: jun. 1999
? semiconductor MSM63188A 2/32 ? stack level call stack level : 16 levels register stack level : 16 levels ? i/o ports input ports: selectable as input with pull-up resistance/input with pull-down resistance/ high-impedance input output ports: selectable as p-channel open drain output/n-channel open drain output/ cmos output/high-impedance output input-output ports: selectable as input with pull-up resistance/input with pull-down resistance/high-impedance input selectable as p-channel open drain output/n-channel open drain output/cmos output/high-impedance output can be interfaced with external peripherals that use a different power supply than this device uses. number of ports: input port : 2 ports 4 bits output port : 6 ports 4 bits input-output port : 6 ports 4 bits ? melody output function melody sound frequency : 529 to 2979 hz tone length : 63 types tempo : 15 types note data : resides in the program memory buzzer drive signal output : 4 khz ? lcd driver number of segments : 1024 max. (64 seg 16 com) 1/1 to 1/16 duty 1/4 or 1/5 bias (regulator built-in) selectable as all-on mode/all-off mode/power down mode/normal display mode adjustable contrast ? multiplier/divider circuits multiplier : (8 bits) (8 bits) ? product (16 bits) divider : (16 bits) ? (8 bits) ? quotient (16 bits), remainder (8 bits) ? reset function reset through reset pin power-on reset reset by low-speed oscillation halt ? battery check low-voltage supply check criterion voltage : can be selected as 1.05 0.10 v, 1.30 0.15 v, 2.20 0.20 v or 2.80 0.30 v ? power supply backup backup circuit (voltage multiplier) enables operation at 0.9 v minimum
? semiconductor MSM63188A 3/32 ? timers and counter 8-bit timer 4 selectable as auto-reload mode/capture mode/clock frequency measurement mode watchdog timer 1 overflows in 2 sec. 100 hz timer 1 measurable in steps of 1/100 sec. 15-bit time base counter 1 1, 2, 4, 8, 16, 32, 64, and 128 hz signals can be read ? serial port mode : uart mode, synchronous mode uart communication speed : 1200 bps, 2400 bps, 4800 bps, 9600 bps clock frequency in synchronous mode : 32.768 khz (internal clock mode), external clock frequency data length : 5 to 8 bits ? interrupt sources external interrupt : 4 internal interrupt : 13 (watchdog timer interrupt is a nonmask- able interrupt) ? operating voltage when backup used : 0.9 to 2.7 v (low-speed clock operating) 1.2 to 2.7 v (operating frequency: 300 to 500 khz) 1.5 to 2.7 v (operating frequency: 200 khz to 1 mhz) when backup not used : 1.8 to 5.5 v (operating frequency: 300 to 500 khz) 2.2 to 5.5 v (operating frequency: 300 khz to 1 mhz) 2.7 to 5.5 v (operating frequency: 200 khz to 2 mhz) ? package: 176-pin plastic lqfp (lqfp176-p-2424-0.50-bk) : (product name: MSM63188A-xxxgs-bk) chip : (product name: MSM63188A-xxx) xxx indicates a code number. differences between the msm63188 and the MSM63188A the MSM63188A has the following improved characteristics. ? supply currents (i dd1 , i dd2 , i dd3 ) in dc characteristics ? the v ddl voltage during a halt of high-speed clock oscillation
? semiconductor MSM63188A 4/32 block diagram an asterisk (*) indicates the port secondary function. indicates that the power is supplied to the circuits corresponding to the signal names inside from v ddi (power supply for interface). rom 16kw extmem bus con- trol mie xt0 xt1 osc0 osc1 tbcclk* hsclk* osc cbr ebr l c g z alu ra a ir instruction decoder ram 3584n d0-7* a0-15* rd * wr * nx-4/250 reset rst v ddi pc h y x timing con- trol sp rsp stack cal : 16-level reg : 16-level muldiv timer 8bit 4 rxc* txc* rxd* txd* 4 int sio tm0cap/tm1cap* tm0ovf/tm1ovf* t02ck* t13ck* 2 int i/o port p8.0-p8.3 p9.0-p9.3 pa.0-pa.3 pb.0-pb.3 pc.0-pc.3 pd.0-pd.3 3 int v ddh v dd cb1 cb2 p2.0-p2.3 p3.0-p3.3 p4.0-p4.3 p5.0-p5.3 p6.0-p6.3 p7.0-p7.3 output port data bus tbc 4 int bld int 100hztc 1 back up v ss melody md 1 int mdb 1 int input port p0.0-p0.3 p1.0-p1.3 lcd & dspr com1-16 seg0-63 lclk* frame* tst1 tst tst2 int wdt 1 v dd1 v dd2 v dd3 v dd4 v dd5 c1 c2 v ddl bias int188
? semiconductor MSM63188A 5/32 pin configuration (top view) 176-pin plastic lqfp note: pins marked as (nc) are no-connection pins which are left open. 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 116 115 114 113 112 111 110 109 108 107 106 105 104 103 102 101 100 99 98 97 96 95 p5.0 p5.1 p5.2 p5.3 p6.0 p6.1 p6.2 p6.3 p7.0 p7.1 p7.2 p7.3 p8.0 p8.1 p8.2 p8.3 p9.0 p9.1 p9.2 p9.3 pa.0 pa.1 pa.2 pa.3 pb.0 pb.1 pb.2 pb.3 pc.0 pc.1 pc.2 pc.3 pd.0 pd.1 pd.2 pd.3 (nc) (nc) seg43 seg42 seg41 seg40 seg39 seg38 seg37 seg36 seg35 seg34 seg33 seg32 seg31 seg30 seg29 seg28 seg27 seg26 seg25 seg24 seg23 seg22 seg21 seg20 seg19 seg18 seg17 seg16 seg15 seg14 seg13 seg12 seg11 seg10 seg9 seg8 seg7 seg6 39 40 41 42 43 44 seg5 seg4 seg3 seg2 seg1 seg0 94 93 92 91 90 89 (nc) (nc) (nc) (nc) (nc) (nc) seg61 seg62 seg63 (nc) p0.0 p0.1 p0.2 p0.3 p1.0 p1.1 p1.2 p1.3 p2.0 p2.1 p2.2 p2.3 p3.0 p3.1 p3.2 p3.3 p4.0 p4.1 p4.2 p4.3 (nc) (nc) seg45 seg46 seg47 seg48 seg49 seg50 seg51 seg52 seg53 seg54 seg55 seg56 seg57 seg58 seg59 seg60 (nc) seg44 158 157 156 155 154 153 152 151 150 149 148 147 146 145 144 143 142 141 140 139 138 137 136 135 134 133 174 173 172 171 170 169 168 167 166 165 164 163 162 161 160 159 176 175 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 45 46 v dd1 v dd2 v dd3 v dd4 v dd5 c1 c2 v ddh cb1 cb2 v dd v ddl osc1 osc0 reset xt1 xt0 tst2 tst1 (nc) (nc) md mdb (nc) v ddi (nc) com15 com14 com13 com12 com11 com10 com9 com8 com7 com6 com5 com4 com3 com2 com1 v ss (nc) com16
? semiconductor MSM63188A 6/32 63 seg21 62 seg22 61 seg23 60 seg24 59 seg25 58 seg26 57 seg27 56 seg28 55 seg29 54 seg30 53 seg31 52 seg32 51 seg33 50 seg34 49 seg35 48 seg36 47 seg37 46 seg38 45 seg39 44 seg40 43 seg41 42 seg42 41 seg43 p7.2 pd.3 pd.2 pd.1 pd.0 pc.3 pc.2 pc.1 pc.0 pb.3 pb.2 pb.1 pb.0 pa.3 pa.2 pa.1 pa.0 p9.3 p9.2 p9.1 p9.0 p8.3 p8.2 p8.1 p8.0 p7.3 121 md 120 tst1 119 tst2 118 xt0 117 xt1 116 reset 115 osc0 114 osc1 113 v ddl 112 v dd 111 cb2 110 cb1 109 v ddh 108 c2 107 c1 106 v dd5 105 v dd4 104 v dd3 103 v dd2 102 v dd1 101 v ss 100 com1 99 com2 98 com3 97 com4 96 com5 95 com6 94 com7 93 com8 92 com9 91 com10 90 com11 89 com12 88 com13 87 com14 86 com15 85 com16 y x p4.3 1 p4.2 2 p4.1 3 p4.0 4 p3.3 5 p3.2 6 p3.1 7 p3.0 8 p2.3 9 p2.2 10 p2.1 11 p2.0 12 p1.3 13 p1.2 14 p1.1 15 p1.0 16 p0.3 17 p0.2 18 p0.1 19 p0.0 20 seg63 21 seg62 22 seg61 23 seg60 24 seg59 25 seg58 26 seg57 27 seg56 28 seg55 29 seg54 30 seg53 31 seg52 32 seg51 33 seg50 34 seg49 35 seg48 36 seg47 37 149 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 seg46 38 seg45 39 seg44 40 73 seg11 72 seg12 71 seg13 70 seg14 69 seg15 68 seg16 67 seg17 66 seg18 65 seg19 64 seg20 83 seg1 82 seg2 81 seg3 80 seg4 79 seg5 78 seg6 77 seg7 76 seg8 75 seg9 74 seg10 84 seg0 123 v ddi 122 mdb p7.1 p7.0 p6.3 p6.2 p6.1 p6.0 p5.3 150 151 152 153 154 155 156 p5.2 p5.1 p5.0 157 158 159 pad configuration pad layout chip size : 6.60 mm 6.60 mm chip thickness : 350 m m (typ.) coordinate origin : chip center pad hole size : 100 m m 100 m m pad size : 110 m m 110 m m minimum pad pitch : 140 m m note: the chip substrate voltage is v ss .
? semiconductor MSM63188A 7/32 pad coordinates pad no. pad name x (m) y (m) 1 p4.3 C2837 C3105 2 C2697 3 C2557 4 C2417 5 C2277 6 C2137 7 C1997 8 C1857 9 C1717 10 C1577 11 C1437 12 C1297 13 C1157 14 C1017 15 C877 16 C737 17 C597 18 C457 19 C317 20 C177 21 54 22 194 23 seg61 334 24 seg60 474 25 seg59 614 26 seg58 754 27 seg57 894 28 seg56 1034 29 seg55 1174 30 seg54 1314 31 seg53 1454 32 seg52 1594 33 seg51 1734 34 seg50 1874 35 seg49 2014 36 seg48 2154 pad no. pad name x (m) y (m) seg42 3155 C2870 C2730 C2590 C2450 C2310 42 C2170 43 C2030 44 C1890 45 C1750 46 C1610 47 C1470 48 C1330 49 C1190 50 C1050 51 C910 52 C770 53 C630 54 C490 55 C350 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 pad no. pad name x (m) y (m) seg1 3155 2870 seg0 3155 com16 2705 83 84 85 86 87 88 89 90 v ss 91 v dd1 92 v dd2 93 v dd3 94 v dd4 95 v dd5 96 c1 97 c2 98 v ddh 99 cb1 100 cb2 101 v dd 102 v ddl 103 osc1 104 osc0 105 106 reset 107 xt1 885 1025 1165 1305 1445 1585 1725 1865 2005 2145 2285 2425 2565 xt0 37 seg47 2294 38 seg46 2434 39 seg45 2574 40 seg44 2714 41 seg43 3155 73 74 75 76 77 2730 tst2 tst1 md mdb 108 v ddi 78 79 80 81 82 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 3010 3105 seg63 seg62 2590 2450 2310 2170 2030 1890 1750 1610 1470 1330 1190 1050 910 770 630 490 350 210 70 C70 C210 745 605 420 270 120 C30 C179 C329 C479 C629 C779 C929 C1079 C1229 C1379 C1529 C1679 C1829 C1979 C2129 C2324 C2464 C2604 C2744 C2884 p4.2 C3105 seg41 3155 com15 3105 p4.1 C3105 seg40 3155 com14 3105 p4.0 C3105 seg39 3155 com13 3105 p3.3 C3105 seg38 3155 com12 3105 p3.2 C3105 seg37 3155 com11 3105 p3.1 C3105 seg36 3155 com10 3105 p3.0 C3105 seg35 3155 com9 3105 p2.3 C3105 seg34 3155 com8 3105 p2.2 C3105 seg33 3155 com7 3105 p2.1 C3105 seg32 3155 com6 3105 p2.0 C3105 seg31 3155 com5 3105 p1.3 C3105 seg30 3155 com4 3105 p1.2 C3105 seg29 3155 com3 3105 p1.1 C3105 seg28 3155 com2 3105 p1.0 C3105 seg27 3155 com1 3105 p0.3 C3105 seg26 3155 3105 p0.2 C3105 seg25 3155 3105 p0.1 C3105 seg24 3155 3105 p0.0 C3105 seg23 3155 3105 C3105 seg22 3155 3105 C3105 seg21 3155 3105 C3105 seg20 3155 3105 C3105 seg19 3155 3105 C3105 seg18 3155 3105 C3105 seg17 3155 3105 C3105 seg16 3155 3105 C3105 seg15 3155 3105 C3105 seg14 3155 3105 C3105 seg13 3155 3105 C3105 seg12 3155 3105 C3105 seg11 3155 3105 C3105 seg10 3155 3105 C3105 seg9 3155 3105 C3105 seg8 3155 3105 C3105 seg7 3155 3105 C3105 seg6 3155 3105 C3105 seg5 3155 3105 C3105 seg4 3155 3105 C3105 seg3 3155 C3010 seg2 3155
? semiconductor MSM63188A 8/32 pad coordinates (continued) pad no. pad name x (m) y (m) 124 pd.3 C3155 2428 125 126 127 128 129 130 131 132 133 134 135 pad no. pad name x (m) y (m) C3155 748 608 468 328 188 136 48 137 C92 138 C232 139 C372 140 C512 141 C652 142 C792 143 144 145 146 147 pad no. pad name x (m) y (m) C3155 C932 148 149 150 151 152 153 154 155 156 157 158 159 C1072 C1212 pd.2 2288 C1352 pd.1 2148 C1492 pd.0 C1632 pc.3 C1772 pc.2 C1912 pc.1 C2172 pc.0 C2312 pb.3 C2452 pb.2 C2592 pb.1 pb.0 pa.3 pa.2 pa.1 pa.0 p9.3 p9.2 p9.1 p9.0 p8.3 p8.2 p8.1 p8.0 p7.3 p7.2 p7.1 p7.0 p6.3 p6.2 p6.1 p6.0 p5.3 p5.2 p5.1 p5.0 C3155 C3155 C3155 2008 C3155 C3155 C3155 1868 C3155 C3155 C3155 1728 C3155 C3155 C3155 1588 C3155 C3155 C3155 1448 C3155 C3155 C3155 1308 C3155 C3155 C3155 1168 C3155 C3155 C3155 1028 C3155 C3155 C3155 888 C3155 C3155 C3155 C3155 C3155 C3155
? semiconductor MSM63188A 9/32 pin descriptions the basic functions of each pin of the MSM63188A are described in table 1. a symbol with a slash (/) denotes a pin that has a secondary function. refer to table 2 for secondary functions. for type, "" denotes a power supply pin, "i" an input pin, "o" an output pin, and "i/o" an input- output pin. table 1 pin descriptions (basic functions) function symbol pin type v dd 73 v ss 62 v dd1 63 v dd2 64 v dd3 65 v dd4 66 power supply v dd5 67 c1 68 c2 69 v ddi 87 v ddl 74 v ddh 70 cb1 71 cb2 72 xt0 79 i oscillation xt1 78 o osc0 76 i osc1 75 o test tst1 81 i tst2 80 i reset reset 77 i melody md 84 o mdb 85 o description positive power supply negative power supply power supply pins for lcd bias (internally generated). capacitors (0.1 m f) should be connected between these pins and v ss . capacitor connection pins for lcd bias generation. a capacitor (0.1 m f) should be connected between c1 and c2. positive power supply pin for external interface (power supply for input, output, and input-output ports) positive power supply pin for internal logic (internally generated). a capacitor (0.1 m f) should be connected between this pin and v ss . voltage multiplier pin for power supply backup (internally generated). a capacitor (1.0 m f) should be connected between this pin and v ss . pins to connect a capacitor for voltage multiplier. a capacitor (1.0 m f) should be connected between cb1 and cb2. low-speed clock oscillation pins. a 32.768 khz crystal should be connected between xt0 and xt1, and c g (5 to 25 pf) should be connected between xt0 and v ss . high-speed clock oscillation pins. a ceramic resonator and capacitors (c l0 , c l1 ) or external oscillation resistor (r os ) should be connected to these pins. input pins for testing. a pull-down resistor is internally connected to these pins. the user cannot use these pins. reset input pin. setting this pin to "h" level puts this device into a reset state. then, setting this pin to "l" level starts executing an instruction from address 0000h. a pull-down resistor is internally connected to this pin. melody output pin (non-inverted output) melody output pin (inverted output)
? semiconductor MSM63188A 10/32 table 1 pin descriptions (basic functions) (continued) function symbol pin type description p0.0/int5 154 p0.1/int5 153 p0.2/int5 152 p0.3/int5 151 p1.0/int5 150 p1.1/int5 149 p1.2/int5 148 p1.3/int5 147 p2.0 146 p2.1 145 p2.2 144 p2.3 143 p3.0 142 p3.1 141 p3.2 140 p3.3 139 p4.0/a0 138 p4.1/a1 137 p4.2/a2 136 p4.3/a3 135 p5.0/a4 132 p5.1/a5 131 p5.2/a6 130 p5.3/a7 129 p6.0/a8 128 p6.1/a9 127 p6.2/a10 126 p6.3/a11 125 p7.0/a12 124 p7.1/a13 123 p7.2/a14 122 p7.3/a15 121 port 4-bit input ports. pull-up resistor input, pull-down resistor input, or high-impedance input is selectable for each bit. 4-bit output ports. p-channel open drain output, n-channel open drain output, cmos output, or high-impedance output is selectable for each bit. i o i o o o o o
? semiconductor MSM63188A 11/32 table 1 pin descriptions (basic functions) (continued) function symbol pin type description p8.0/ rd 120 p8.1/ wr 119 p8.2 118 p8.3/int4 117 p9.0/d0 116 p9.1/d1 115 p9.2/d2 114 p9.3/d3 113 pa.0/d4 112 pa.1/d5 111 pa.2/d6 110 pa.3/d7 109 port 4-bit input-output ports. in input mode, pull-up resistor input, pull-down resistor input, or high-impedance input is selectable for each bit. in output mode, p-channel open drain output, n-channel open drain output, cmos output, or high-impedance output is selectable for each bit. i/o pb.0/int0/ tm0cap/ tm0ovf 108 pb.1/int0/ tm1cap/ tm1ovf 107 pb.2/int0/t02ck 106 pb.3/int0/t13ck 105 pc.0/int1/rxd 104 pc.1/int1/txc 103 pc.2/int1/rxc 102 pc.3/int1/txd 101 pd.0/frame 100 pd.1/lclk 99 pd.2/tbcclk 98 pd.3/hsclk 97 i/o i/o i/o i/o i/o
? semiconductor MSM63188A 12/32 table 1 pin descriptions (basic functions) (continued) function symbol pin type description com1 61 com2 60 com3 59 com4 58 com5 57 com6 56 com7 55 com8 54 com9 53 com10 52 com11 51 com12 50 com13 49 com14 48 com15 47 com16 46 seg0 44 seg1 43 seg2 42 seg3 41 seg4 40 seg5 39 seg6 38 seg7 37 seg8 36 seg9 35 seg10 34 seg11 33 seg12 32 seg13 31 seg14 30 seg15 29 seg16 28 seg17 27 seg18 26 seg19 25 seg20 24 seg21 23 seg22 22 seg23 21 seg24 20 o lcd segment signal output pins o lcd common signal output pins lcd
? semiconductor MSM63188A 13/32 table 1 pin descriptions (basic functions) (continued) function symbol pin type description seg25 19 seg26 18 seg27 17 seg28 16 seg29 15 seg30 14 seg31 13 seg32 12 seg33 11 seg34 10 seg35 9 seg36 8 seg37 7 seg38 6 seg39 5 seg40 4 seg41 3 seg42 2 seg43 1 seg44 175 seg45 174 seg46 173 seg47 172 seg48 171 seg49 170 seg50 169 seg51 168 seg52 167 seg53 166 seg54 165 seg55 164 seg56 163 seg57 162 seg58 161 seg59 160 seg60 159 seg61 158 seg62 157 seg63 156 o lcd segment signal output pins lcd
? semiconductor MSM63188A 14/32 table 2 shows the secondary functions of each pin of the MSM63188A. table 2 pin descriptions (secondary functions) function symbol pin type description external interrupt pb.0/int0 108 pb.1/int0 107 pb.2/int0 106 pb.3/int0 105 pc.0/int1 i pc.1/int1 103 pc.2/int1 102 pc.3/int1 101 p0.0/int5 154 p0.1/int5 153 p0.2/int5 152 p0.3/int5 151 p1.0/int5 150 p1.1/int5 149 p1.2/int5 148 p1.3/int5 147 external 0 interrupt input pins. the change of input signal level causes an interrupt to occur. the port b interrupt enable register (pbie) enables or disables an interrupt for each bit. external 5 interrupt input pins. the change of input signal level causes an interrupt to occur. the port 0 interrupt enable register (p0ie) and port 1 interrupt enable register (p1ie) enable or disable an interrupt for each bit. i 104 i external 1 interrupt input pins. the change of input signal level causes an interrupt to occur. the port c interrupt enable register (pcie) enables or disables an interrupt for each bit. p8.3/int4 117 external 4 interrupt input pins. the change of input signal level causes an interrupt to occur. i
? semiconductor MSM63188A 15/32 table 2 pin descriptions (secondary functions) (continued) function symbol pin type description timer 0 overflow flag output pin. timer 1 overflow flag output pin. external clock input pin for timer 0 and timer 2. external clock input pin for timer 1 and timer 3. frame output pin for lcd driver expansion clock output pin for lcd driver expansion low-speed oscillation clock output pin high-speed oscillation clock output pin serial port receive data input pin sync serial port clock input-output pin. transmit clock output when this device is used as a master processor. transmit clock input when this device is used as a slave processor. sync serial port clock input-output pin. receive clock output when this device is used as a master processor. receive clock input when this device is used as a slave processor. serial port transmit data output pin. pb.0/tm0ovf 108 o pb.1/tm1ovf 107 o pb.2/t02ck 106 i pb.3/t13ck 105 i pd.0/frame 100 o pd.1/lclk 99 o pd.2/tbcclk 98 o pd.3/hsclk 97 o pc.0/rxd 104 i pc.1/txc 103 i/o pc.2/rxc 102 i/o pc.3/txd 101 o timer lcd external expansion oscillation output serial port timer 0 capture input pin. timer 1 capture input pin. pb.0/tm0cap 108 i pb.1/tm1cap 107 i capture
? semiconductor MSM63188A 16/32 table 2 pin descriptions (secondary functions) (continued) external memory function symbol pin type description p4.0/a0 138 p4.1/a1 137 p4.2/a2 136 p4.3/a3 135 p5.0/a4 132 p5.1/a5 131 p5.2/a6 130 p5.3/a7 129 p6.0/a8 128 p6.1/a9 127 p6.2/a10 126 p6.3/a11 125 p7.0/a12 124 p7.1/a13 123 p7.2/a14 122 p7.3/a15 121 p9.0/d0 116 p9.1/d1 115 p9.2/d2 114 p9.3/d3 113 pa.0/d4 112 pa.1/d5 111 pa.2/d6 110 pa.3/d7 109 p8.0/ rd 120 p8.1/ wr 119 o address output bus for external memory i/o data bus for external memory o read signal output pin for external memory (negative logic) o write signal output pin for external memory (negative logic)
? semiconductor MSM63188A 17/32 absolute maximum ratings parameter symbol condition rating unit C0.3 to +1.6 power supply voltage 1 ta = 25c v dd1 v C0.3 to +2.9 power supply voltage 2 ta = 25c v dd2 v C0.3 to +4.2 power supply voltage 3 ta = 25c v dd3 v C0.3 to +5.5 power supply voltage 4 ta = 25c v dd4 v C0.3 to +6.8 power supply voltage 5 ta = 25c v dd5 v power supply voltage 6 v dd C0.3 to +6.0 power supply voltage 7 ta = 25c v ddi v C0.3 to +6.0 power supply voltage 8 ta = 25c v ddh v C0.3 to v dd + 0.3 input voltage 1 v dd input, ta = 25c v in1 v C0.3 to v ddi + 0.3 input voltage 2 v ddi input, ta = 25c v in2 v C0.3 to v dd1 + 0.3 output voltage 1 v dd1 output, ta = 25c v out1 v C0.3 to v dd2 + 0.3 output voltage 2 v dd2 output, ta = 25c v out2 v C0.3 to v dd3 + 0.3 output voltage 3 v dd3 output, ta = 25c v out3 v C0.3 to v dd4 + 0.3 output voltage 4 v dd4 output, ta = 25c v out4 v C0.3 to v dd5 + 0.3 output voltage 5 v dd5 output, ta = 25c v out5 v C0.3 to v dd + 0.3 output voltage 6 v dd output, ta = 25c v out6 v C0.3 to v ddi + 0.3 output voltage 7 v ddi output, ta = 25c v out7 v C0.3 to v ddh + 0.3 output voltage 8 v ddh output, ta = 25c v out8 v C55 to +150 storage temperature t stg c (v ss = 0 v) C0.3 to +6.0 power supply voltage 9 ta = 25c v ddl v C0.3 to +6.0 ta = 25c v
? semiconductor MSM63188A 18/32 recommended operating conditions ? when backup is used v ddi 0.9 to 5.5 v crystal oscillation frequency f xt 30 to 35 khz ceramic oscillation frequency f cm 200k to 1m v dd = 1.5 to 2.7 v parameter symbol condition range unit operating temperature t op C20 to +70 c v dd 0.9 to 2.7 v operating voltage (v ss = 0 v) external rc oscillator resistance r os 50 to 300 v dd = 1.5 to 2.7 v 300k to 500k hz v dd = 1.2 to 2.7 v 100 to 300 k w v dd = 1.2 to 2.7 v v ddi 1.8 to 5.5 v crystal oscillation frequency f xt 30 to 35 khz ceramic oscillation frequency f cm 300k to 1m hz v dd = 2.2 to 5.5 v parameter symbol condition range unit operating temperature t op C20 to +70 c v dd 1.8 to 5.5 v operating voltage (v ss = 0 v) external rc oscillator resistance r os 50 to 300 k w v dd = 2.2 to 5.5 v 200k to 2m v dd = 2.7 to 5.5 v 30 to 300 v dd = 2.7 to 5.5 v 300k to 500k v dd = 1.8 to 5.5 v 100 to 300 v dd = 1.8 to 5.5 v ? when backup is not used
? semiconductor MSM63188A 19/32 electrical characteristics dc characteristics parameter symbol condition mea- suring circuit unit 1.9 1.8 1.7 v dd2 voltage max. typ. min. v dd2 1/5 bias, 1/4 bias (ta = 25c) v C4 v dd2 voltage temperature deviation d v dd2 mv/c typ.+ 0.3 3/2 v dd2 typ.C 0.3 v dd3 voltage v dd3 1/5 bias v typ.+ 0.4 2 v dd2 typ.C 0.4 v dd4 voltage v dd4 1/5 bias v typ.+ 0.5 5/2 v dd2 typ.C 0.5 v dd5 voltage v dd5 1/5 bias v 1.0 crystal oscillation start voltage v sta oscillation start time: within 5 seconds v 0.9 crystal oscillation hold voltage v hold backup v 5.0 0.1 crystal oscillation stop detect time t stop ms 25 5 external crystal oscillator capacitance c g pf 30 25 20 internal crystal oscillator capacitance c d pf 16 12 8 internal rc oscillator capacitance c os pf 30 external ceramic oscillator capacitance c l0, 1 csa2.00mg (murata mfg.-make) used v dd = 3.0 v pf 0.4 0.0 por voltage v por1 v dd = 1.5 v v 1 0.7 0.0 v dd = 3.0 v v 1.7 backup not used v 1.8 1.3 0.8 v ddl voltage v ddl high-speed clock oscillation stopped v 5.5 1.2 high-speed clock oscillation (v dd = 1.2 to 5.5 v) v v ddh 2.7 2.0 v ddh voltage (backup used) high-speed clock oscillation (ceramic oscillation, 1 mhz) v dd = 1.5 v v high-speed clock oscillation stopped v dd = 1.5 v 3.0 2.8 v (v dd = v ddi = 0.9 to 5.5 v, v ss = 0 v, ta = C20 to +70c unless otherwise specified) typ.+ 0.2 1/2 v dd2 typ.C 0.2 v dd1 voltage v dd1 1/5 bias, 1/4 bias v typ.+ 0.2 v dd2 typ.C 0.2 1/4 bias (connect v dd3 and v dd2 ) typ.+ 0.3 3/2 v dd2 typ.C 0.3 1/4 bias typ.+ 0.4 2 v dd2 typ.C 0.4 1/4 bias 1.5 1.2 non-por voltage v por2 v dd = 1.5 v v 3.0 2.0 v dd = 3.0 v v notes: 1. "t stop " indicates that if the crystal oscillator stops over the value of t stop , the system reset occurs. 2. "por" denotes power on reset. 3. "v por1 " indicates that por occurs when v dd falls from v dd to v por1 and again rises up to v dd . 4. "v por2 " indicates that por does not occur when v dd falls from v dd to v por2 and again rises up to v dd .
? semiconductor MSM63188A 20/32 parameter symbol condition mea- suring circuit (v dd = v ddi = 1.5 v, v ss = 0 v, 1/5 bias, ta = C20 to +70c unless otherwise specified) unit max. typ. min. supply current 1 i dd1 cpu is in halt state. (high-speed clock oscillation stopped) m a supply current 2 i dd2 cpu is in halt state. lcd is in power down mode. (high-speed clock oscillation stopped) m a supply current 3 i dd3 cpu is in operation at low-speed oscillation. (high-speed clock oscillation stopped) m a 1 ta = C20 to +50c ta = C20 to +50c ta = C20 to +70c ta = C20 to +70c 900 700 supply current 4 i dd4 cpu is in operation at high-speed oscillation (rc oscillation, f = approx. 720 khz, r os = 51 k w ) m a 1000 800 supply current 5 i dd5 cpu is in operation at high-speed oscillation (ceramic oscillation, 1 mhz) m a 7.0 5.6 8.5 5.6 5.5 4.5 7.0 4.5 22 18 dc characteristics (continued) ? when backup is used ? when backup is not used parameter symbol condition mea- suring circuit (v dd = v ddi = 3.0 v, v ss = 0 v, 1/5 bias, ta = C20 to +70c unless otherwise specified) unit max. typ. min. supply current 1 i dd1 cpu is in halt state. (high-speed clock oscillation stopped) m a supply current 2 i dd2 cpu is in halt state. lcd is in power down mode. (high-speed clock oscillation stopped) m a supply current 3 i dd3 1 ta = C20 to +50c ta = C20 to +50c ta = C20 to +70c ta = C20 to +70c supply current 4 i dd4 cpu is in operation at high-speed oscillation (rc oscillation) 1500 1000 supply current 5 i dd5 cpu is in operation at high-speed oscillation (ceramic oscillation, 2 mhz) m a cpu is in operation at low-speed oscillation. (high-speed clock oscillation stopped) m a 800 550 m a f = approx. 800 khz, r os = 51 k w f = approx. 500 khz, r os = 100 k w 3.0 2.7 3.5 2.7 2.4 2.1 3.0 2.1 10.5 8.5 450 390
? semiconductor MSM63188A 21/32 dc characteristics (continued) parameter symbol condition mea- suring circuit (v dd = v ddi = v ddh = 3.0 v, v ss = 0 v, v dd1 = 1.1 v, v dd2 = 2.2 v, v dd3 = 3.3 v, v dd4 = 4.4 v, v dd5 = 5.5 v, ta = C20 to +70c unless otherwise specified) unit max. output current 1 (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) (pc.0 to pc.3) (pd.0 to pd.3) C0.2 ma 2 i oh1 v oh1 = v ddi C 0.5 v C1.0 ma C1.5 ma output current 2 (md, mdb) output current 4 (osc1) i oh4r v oh4r = v ddh C 0.5 v (rc oscillation) C0.75 ma output leakage (p2.0 to p2.3) (p3.0 to p3.3) (p4.0 to p4.3) (pd.0 to pd.3) i ooh v oh = v ddi 0.3 m a i ool v ol = v ss m a typ. C1.2 C3.0 C4.0 C1.5 min. C2.0 C5.0 C8.0 C2.5 C0.3 v ddi = 1.5 v v ddi = 3.0 v v ddi = 5.0 v 2.0 ma i ol1 v ol1 = 0.5 v 5.0 ma 8.0 ma 1.2 3.0 4.0 0.2 1.0 1.5 v ddi = 1.5 v v ddi = 3.0 v v ddi = 5.0 v C0.4 ma i oh2 v oh2 = v dd C 0.7 v C2.0 ma C3.0 ma C1.3 C4.0 C5.5 C2.5 C6.0 C9.0 v dd = 1.5 v v dd = 3.0 v v dd = v ddh = 5.0 v 2.5 ma i ol2 v ol2 = 0.7 v 6.0 ma 9.0 ma 1.3 4.0 5.5 0.4 2.0 3.0 v dd = 1.5 v v dd = 3.0 v v dd = v ddh = 5.0 v output current 3 (seg0 to seg63) (com1 to com16) C4 m a i ohm3 m a m a 4 m a i omh3s m a m a v dd = v ddh = 3.0 v v dd = v ddh = 5.0 v C1.0 ma C2.0 C3.5 i ol4r v ol4r = 0.5 v (rc oscillation) 2.5 ma 1.5 0.75 v dd = v ddh = 3.0 v v dd = v ddh = 5.0 v 3.5 ma 2.0 1.0 i oh4c v oh4c = v ddh C 0.5 v (ceramic oscillation) C60 m a C180 C300 v dd = v ddh = 3.0 v v dd = v ddh = 5.0 v C100 m a C280 C450 i ol4c v ol4c = 0.5 v (ceramic oscillation) 300 m a 120 60 v dd = v ddh = 3.0 v v dd = v ddh = 5.0 v 450 m a 200 100 i oh3 v oh3 = v dd5 C 0.2 v (v dd5 level) i ohm3s i oml3 i omh3 m a i oml3s m a i olm3 m a i olm3s m a i ol3 v ohm3 = v dd4 + 0.2 v (v dd4 level) v ohm3s = v dd4 C 0.2 v (v dd4 level) v omh3 = v dd3 + 0.2 v (v dd3 level) v omh3s = v dd3 C 0.2 v (v dd3 level) v oml3 = v dd2 + 0.2 v (v dd2 level) v oml3s = v dd2 C 0.2 v (v dd2 level) v olm3 = v dd1 + 0.2 v (v dd1 level) v olm3s = v dd1 C 0.2 v (v dd1 level) v ol3 = v ss + 0.2 v (v ss level) C4 4 C4 4 C4 4 C4 4
? semiconductor MSM63188A 22/32 dc characteristics (continued) parameter symbol condition mea- suring circuit (v dd = v ddi = v ddh = 3.0 v, v ss = 0 v, v dd1 = 1.1 v, v dd2 = 2.2 v, v dd3 = 3.3 v, v dd4 = 4.4 v, v dd5 = 5.5 v, ta = C20 to +70c unless otherwise specified) unit max. input current 1 (p0.0 to p0.3) (p1.0 to p1.3) (p8.0 to p8.3) (p9.0 to p9.3) (pd.0 to pd.3) 30 m a 3 i ih1 v ih1 = v ddi (when pulled down) 180 m a 600 m a input current 3 (reset) i ih3 v ih3 = v dd 80 m a typ. 10 90 250 50 min. 2 30 70 10 v ddi = 1.5 v v ddi = 3.0 v v ddi = 5.0 v C2 m a i il1 v il1 = v ss (when pulled up) C30 m a C70 m a C10 C90 C250 C30 C180 C600 v ddi = 1.5 v v ddi = 3.0 v v ddi = 5.0 v input current 2 (osc0) C30 m a i il2 v il2 = v ss (when pulled up) C150 m a C110 C350 C200 C600 v dd = v ddh = 3.0 v v dd = v ddh = 5.0 v v dd = 1.5 v v dd = 3.0 v 600 m a 350 150 i ih1z v ih1 = v ddi (in a high impedance state) 1.0 m a 0.0 i il1z v il1 = v ss (in a high impedance state) 0.0 m a C1.0 i ih2r v ih2r = v ddh (rc oscillation) 1.0 m a 0.0 i il2r v il2r = v ss (rc oscillation) 0.0 m a C1.0 1.0 m a i ih2c v ih2c = v ddh (ceramic oscillation) 3.0 m a 0.5 1.5 0.1 0.75 v dd = v ddh = 3.0 v v dd = v ddh = 5.0 v C0.1 m a i il2c v il2c = v ss (ceramic oscillation) C0.75 m a C0.5 C1.5 C1.0 C3.0 v dd = v ddh = 3.0 v v dd = v ddh = 5.0 v v dd = v ddh = 5.0 v 2.0 ma 1.0 0.5 i il3 v il3 = v ss 0.0 m a C1.0 input current 4 (tst1, tst2) i ih4 v ih4 = v dd 300 m a 150 50 v dd = 1.5 v v dd = 3.0 v 1.5 ma 1.0 0.5 v dd = v ddh = 5.0 v 4.0 ma 2.5 1.25 i il4 v il4 = v ss 0.0 m a C1.0
? semiconductor MSM63188A 23/32 dc characteristics (continued) parameter symbol condition mea- suring circuit (v dd = v ddi = v ddh = 3.0 v, v ss = 0 v, v dd1 = 1.1 v, v dd2 = 2.2 v, v dd3 = 3.3 v, v dd4 = 4.4 v, v dd5 = 5.5 v, ta = C20 to +70c unless otherwise specified) unit max. typ. min. input voltage 1 (p0.0 to p0.3) (p1.0 to p1.3) (p8.0 to p8.3) (p9.0 to p9.3) (pd.0 to pd.3) v ddi = 1.5 v 1.2 1.5 v 4 v ih1 v ddi = 3.0 v 2.4 3.0 v v ddi = 5.0 v 4.0 5.0 v input voltage 2 (osc0) d v t2 input pin capacitance (p0.0 to p0.3) (p1.0 to p1.3) (p8.0 to p8.3) (p9.0 to p9.3) (pc.0 to pc.3) (pd.0 to pd.3) c in 5pf hysteresis width 2 (reset, tst1, tst2) 1 v ddi = 1.5 v 0.0 0.3 v v il1 v ddi = 3.0 v 0.0 0.6 v v ddi = 5.0 v 0.0 1.0 v v dd = v ddh = 3.0 v 2.4 3.0 v v ih2 v dd = v ddh = 5.0 v 4.0 5.0 v v dd = v ddh = 3.0 v 0.0 0.6 v v il2 v dd = v ddh = 5.0 v 0.0 1.0 v input voltage 3 (reset, tst1, tst2) v dd = 1.5 v 1.35 1.5 v v ih3 v dd = 3.0 v 2.4 3.0 v v dd = v ddh = 5.0 v 4.0 5.0 v v dd = 1.5 v 0.0 0.15 v v il3 v dd = 3.0 v 0.0 0.6 v v dd = v ddh = 5.0 v 0.0 1.0 v v ddi = 1.5 v 0.05 0.1 0.3 v d v t1 v ddi = 3.0 v 0.2 0.5 1.0 v v ddi = 5.0 v 0.25 1.0 1.5 v hysteresis width 1 (p0.0 to p0.3) (p1.0 to p1.3) (p8.0 to p8.3) (pd.0 to pd.3) v dd = 1.5 v 0.05 0.1 0.3 v v dd = 3.0 v 0.2 0.5 1.0 v v dd = v ddh = 5.0 v 0.25 1.0 1.5 v
? semiconductor MSM63188A 24/32 measuring circuit 1 measuring circuit 2 v ss a v ih v il *2 v dd v ddi v dd1 v dd2 v dd3 v dd4 v dd5 v ddh input output *3 v ddl *2 input logic circuit to determine the specified measuring conditions. *3 measured at the s p ecified out p ut p ins. c b12 cb1 cb2 c 12 c1 c2 osc0 q osc1 w *1 v ss a v dd v ddi v dd1 v c a v dd2 v c b v dd3 v c c v dd4 v c d v dd5 v c e v ddh v c h xt0 xt1 c g c a , c b , c c , c d , c e , c l , c 12 c b12 , c h c g c l0 c l1 ceramic resonator : 0.1 m f : 1 m f : 15 pf : 30 pf : 30 pf : csa2.00mg (2 mhz) csb1000j (1 mhz) (murata mfg.-make) c l0 c l1 q w q w *1 rc oscillator r os ceramic oscillator ceramic resonator v ddl v c l 32.768 khz crystal
? semiconductor MSM63188A 25/32 measuring circuit 3 v ss v dd v ddi v dd1 v dd2 v dd3 v dd4 v dd5 v ddh input output a *4 v ddl measuring circuit 4 v ss v ih v il *4 v dd v ddi v dd1 v dd2 v dd3 v dd4 v dd5 v ddh input output *4 measured at the specified input pins. waveform monitoring v ddl
? semiconductor MSM63188A 26/32 txd (pc.3) rxd (pc.0) t cyc t ddr t r t f t cwh t cwl t ddr t ds t ds t dh 5 v (v ddi ) 0 v (v ss ) 5 v (v ddi ) 0 v (v ss ) 5 v (v ddi ) 0 v (v ss ) txc (pc.1)/ rxc (pc.2) ac characteristics (serial interface, serial port) (v dd = 0.9 to 5.5 v, v ddh = 1.8 to 5.5 v, v ss = 0 v, v ddi = 5.0 v, ta = C20 to +70 c unless otherwise specified) (1) synchronous communication parameter symbol condition unit txc/rxc input fall time max. typ. min. t f m s 1.0 txc/rxc input rise time t r m s 1.0 0.8 txc/rxc input "l" level pulse width t cwl m s 0.8 txc/rxc input "h" level pulse width t cwh m s 2.0 txc/rxc input cycle time t cyc m s txc/rxc output cycle time t cyc1(o) cpu in operation state at 32 khz m s 30.5 t cyc2(o) cpu in operation at 2 mhz v dd = v ddh = 2.7 v to 5.5 v m s 0.5 txd output delay time t ddr output load capacitance 10 pf m s 0.4 0.5 rxd input setup time t ds m s 0.8 rxd input hold time t dh m s synchronous communication timing ("h" level = 4.0 v, "l" level = 1.0 v)
? semiconductor MSM63188A 27/32 txd (pc.3) t brt 5 v (v ddi ) 0 v (v ss ) rxd (pc.0) r brt 5 v (v ddi ) 0 v (v ss ) (2) uart communication parameter symbol condition unit t brt Ct cr transmit baud rate max. typ. min. t brt t brt = 1/f brt t cr = 1/f osc s t brt t brt +t cr r brt 0.97 receive baud rate r brt s r brt r brt 1.03 r brt = 1/f brt f brt : baud rates (1200, 2400, 4800, 9600 bps) uart communication timing ("h" level = 4.0 v, "l" level = 1.0 v)
? semiconductor MSM63188A 28/32 ac characteristics (external memory interface) (v dd = 0.9 to 5.5 v, v ddh = 1.8 to 5.5 v, v ss = 0 v, v ddi = 5.0 v, ta = C20 to +70 c unless otherwise specified) (1) reading from external memory parameter read cycle time rd output delay time output valid time external memory output delay time symbol condition min. typ. max. unit t rc t oe t oha t do 61.0 m s m s m s m s 5.0 5.0 5.0 (a) when cpu operates at 32.768 khz parameter read cycle time rd output delay time output valid time external memory output delay time symbol condition min. typ. max. unit t rc t oe t oha t do 1.0 m s ns ns ns 100 100 150 (b) when cpu operates at 2 mhz (v ddh = 2.7 to 5.5 v) ac characteristics timing ("h" level = 4.0 v, "l" level = 1.0 v) t rc t oe t oha t do address output port setup value port setup value input data port setup value port setup value p7 - p4 (a15 - a0) p8.0 ( rd ) pa, p9 (d7 - d0) movxb obj, [ra] movxb obj, xadr16 s2 s1 s2 s1 s2 s1 system clock 5 v (v ddi ) 0 v (v ss ) 5 v (v ddi ) 0 v (v ss ) 5 v (v ddi ) 0 v (v ss )
? semiconductor MSM63188A 29/32 (2) writing to external memory parameter write cycle time address setup time write time write recovery time symbol condition min. typ. max. unit t wc t as t w t wr 61.0 m s m s m s m s (a) when cpu operates at 32.768 khz data setup time t ds m s data hold time t dh m s 30.5 15.3 15.3 45.8 15.3 parameter write cycle time address setup time write time write recovery time symbol condition min. typ. max. unit t wc t as t w t wr 1.0 m s m s m s m s (b) when cpu operates at 2 mhz (v ddh = 2.7 to 5.5 v) data setup time t ds m s data hold time t dh m s 0.4 0.2 0.2 0.7 0.2 ac characteristics timing ("h" level = 4.0 v, "l" level = 1.0 v) t wc t ds t dh t as address output port setup value port setup value p7 - p4 (a15 - a0) p8.1 ( wr ) pa, p9 (d7 - d0) movxb [ra], obj or movxb xadr16, obj s2 s1 s2 s1 s2 s1 system clock output data port setup value port setup value t w t wr 5 v (v ddi ) 0 v (v ss ) 5 v (v ddi ) 0 v (v ss ) 5 v (v ddi ) 0 v (v ss )
? semiconductor MSM63188A 30/32 application circuits note: v ddi is the power supply pin for the input, output, and input-output ports. be sure to connect the v ddi pin either to the positive power supply pin (v dd ) of this device or to the positive power supply pin of the external memory. application circuit example with power supply backup xt0 com1-16 xt1 v ddh v dd cb1 cb2 v dd5 v dd4 v dd3 v dd2 v dd1 c1 c2 reset tst1 tst2 md mdb v ss seg0-63 osc0 osc1 r os p1.3 p1.2 p1.1 p1.0 p0.3 p0.2 p0.1 p0.0 p3.3 p3.2 p3.1 p3.0 p2.3 p2.2 p2.1 p2.0 c b12 c v c g c 12 lcd crystal 32.768 khz c h 1.5 v c e c d c c c b c a buzzer ?rc oscillation is selected as high-speed oscillation. ?ports are powered from external memory power source. ?c v is an ic power supply bypass capacitor. ?values of c a , c b , c c , c d , c e , c l , c b12 , c 12 , c h , and c g , are for reference only. v ddi p4-7 p9, pa p8.0 p8.1 sw matrix (8 8) v dd a15-0 d7-0 rd wr v ss external memory (64k 8 bits) 5.0 v v ddl c l open push sw 0.1 m f 0.1 m f 0.1 m f 0.1 m f 0.1 m f 0.1 m f 1.0 m f 0.1 m f 0.1 m f 1.0 m f 5 to 25 pf MSM63188A
? semiconductor MSM63188A 31/32 note: v ddi is the power supply pin for the input, output, and input-output ports. be sure to connect the v ddi pin either to the positive power supply pin (v dd ) of this device or to the positive power supply pin of the external memory. application circuit example with no power supply backup application circuits (continued) xt0 com1-16 xt1 v ddh v dd v dd5 v dd4 v dd3 v dd2 v dd1 c1 c2 reset tst1 tst2 md mdb v ss seg0-63 osc0 osc1 p1.3 p1.2 p1.1 p1.0 p0.3 p0.2 p0.1 p0.0 p3.3 p3.2 p3.1 p3.0 p2.3 p2.2 p2.1 p2.0 c v c g c 12 lcd crystal 32.768 khz v dd 5.0 v c e c d c c c b c a buzzer ?ceramic oscillation is selected as high-speed oscillation. ?ports, external memory, and ic share their power supply. ?c v is an ic power supply bypass capacitor. ?values of c a , c b , c c , c d , c e , c l , c 12 , c g , c l0 , and c l1 are for reference only. v ddi p4-7 p9, pa p8.0 p8.1 sw matrix (8 8) v dd a15-0 d7-0 rd wr v ss external memory (64k 8 bits) v dd c l0 30 pf c l1 30 pf ceramic resonator (example: 1 mhz) cb1 cb2 v ddl c l MSM63188A open 0.1 m f 0.1 m f 0.1 m f 0.1 m f 0.1 m f 0.1 m f 0.1 m f 0.1 m f open push sw 5 to 25 pf
? semiconductor MSM63188A 32/32 (unit : mm) package dimensions notes for mounting the surface mount type package the sop, qfp, tsop, tqfp, lqfp, soj, qfj (plcc), shp, and bga are surface mount type packages, which are very susceptible to heat in reflow mounting and humidity absorbed in storage. therefore, before you perform reflow mounting, contact okis responsible sales person on the product name, package name, pin number, package code and desired mounting conditions (reflow method, temperature and times). lqfp176-p-2424-0.50-bk package material lead frame material pin treatment solder plate thickness package weight (g) epoxy resin 42 alloy solder plating 5 m m or more 1.87 typ. mirror finish
notice 1. the information contained herein can change without notice owing to product and/or technical improvements. before using the product, please make sure that the information being referred to is up-to-date. 2. the outline of action and examples for application circuits described herein have been chosen as an explanation for the standard action and performance of the product. when planning to use the product, please ensure that the external conditions are reflected in the actual circuit, assembly, and program designs. 3. when designing your product, please use our product below the specified maximum ratings and within the specified operating ranges including, but not limited to, operating voltage, power dissipation, and operating temperature. 4. oki assumes no responsibility or liability whatsoever for any failure or unusual or unexpected operation resulting from misuse, neglect, improper installation, repair, alteration or accident, improper handling, or unusual physical or electrical stress including, but not limited to, exposure to parameters beyond the specified maximum ratings or operation outside the specified operating range. 5. neither indemnity against nor license of a third partys industrial and intellectual property right, etc. is granted by us in connection with the use of the product and/or the information and drawings contained herein. no responsibility is assumed by us for any infringement of a third partys right which may result from the use thereof. 6. the products listed in this document are intended for use in general electronics equipment for commercial applications (e.g., office automation, communication equipment, measurement equipment, consumer electronics, etc.). these products are not authorized for use in any system or application that requires special or enhanced quality and reliability characteristics nor in any system or application where the failure of such system or application may result in the loss or damage of property, or death or injury to humans. such applications include, but are not limited to, traffic and automotive equipment, safety devices, aerospace equipment, nuclear power control, medical equipment, and life-support systems. 7. certain products in this document may need government approval before they can be exported to particular countries. the purchaser assumes the responsibility of determining the legality of export of these products and will take appropriate and necessary steps at their own expense for these. 8. no part of the contents contained herein may be reprinted or reproduced without our prior permission. 9. ms-dos is a registered trademark of microsoft corporation. copyright 1999 oki electric industry co., ltd. printed in japan e2y0002-29-62

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